Low-leakage tetragonal ZrO 2 (EOT < 1 nm) with in situ plasma interfacial passivation on germanium

Chen-Han Chou*, Hao Hsuan Chang, Chung Chun Hsu, Wen Kuan Yeh, Chao-Hsin Chien

*此作品的通信作者

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

We successfully fabricated gate stacks (ZrO2/GeOx/Ge) with a subnanometer equivalent oxide thickness (EOT) and low-leakage current on n-/p-Ge through plasma-enhanced atomic layer deposition (ALD). A 0.78-nm-thick GeOx was formed through plasma oxidation (i.e., in situ plasma interfacial passivation, followed by 3.48-nm-thick ZrO2 growth in the same ALD reactor). A subnanometer EOT of ∼0.9 nm was achieved with a relatively high dielectric constant (roughly 30) of tetragonal-phase ZrO2. The gate leakage was ∼ 1 × 10-4A/cm2 at VFB-1V, and roughly 5 × 10-5A/cm2 at VFB+1V on p- and n-type Ge, respectively. Our ZrO2 stabilized in the tetragonal phase, when the post-deposition annealing temperature, was higher than 500 °C. Therefore, the proposed scheme is simple and effective for use in pursuing an ultralow EOT gate dielectric on Ge.

原文English
文章編號7358074
頁(從 - 到)138-141
頁數4
期刊Ieee Electron Device Letters
37
發行號2
DOIs
出版狀態Published - 1 2月 2016

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