Low-leakage in0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic in xGa1-xP buffer

Chi Kuan Lin; Hao-Chung Kuo; Yu Sheng Liao; Gong Ru Lin

doi:10.1117/12.577048

Low-leakage in0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic in xGa1-xP buffer

Chi Kuan Lin^*, Hao-Chung Kuo, Yu Sheng Liao, Gong Ru Lin

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

摘要

A novel top-illuminated metamorphic In_0.53Ga_0.47As p-i-n hotodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded In_xGa_1-xP (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9×10^-11 W/Hz^1/2, and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.

原文	English
文章編號	78
頁（從 - 到）	399-406
頁數	8
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	5624
DOIs	https://doi.org/10.1117/12.577048
出版狀態	Published - 6 5月 2005
事件	Semiconductor and Organic Optoelectronic Materials and Devices - Beijing, 中國持續時間: 9 11月 2004 → 11 11月 2004

存取文件

10.1117/12.577048

其它文件與鏈接

Link to publication in Scopus

引用此

@article{8b4adf2ab8bb4f70b93662118baf51f9,

title = "Low-leakage in0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic in xGa1-xP buffer",

abstract = "A novel top-illuminated metamorphic In0.53Ga0.47As p-i-n hotodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded InxGa1-xP (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9×10-11 W/Hz1/2, and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.",

keywords = "GaAs, Heterostructure, InGaAs, Metamorphic, p-i-n photodiode",

author = "Lin, {Chi Kuan} and Hao-Chung Kuo and Liao, {Yu Sheng} and Lin, {Gong Ru}",

year = "2005",

month = may,

day = "6",

doi = "10.1117/12.577048",

language = "English",

volume = "5624",

pages = "399--406",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Semiconductor and Organic Optoelectronic Materials and Devices ; Conference date: 09-11-2004 Through 11-11-2004",

}

TY - JOUR

T1 - Low-leakage in0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic in xGa1-xP buffer

AU - Lin, Chi Kuan

AU - Kuo, Hao-Chung

AU - Liao, Yu Sheng

AU - Lin, Gong Ru

PY - 2005/5/6

Y1 - 2005/5/6

N2 - A novel top-illuminated metamorphic In0.53Ga0.47As p-i-n hotodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded InxGa1-xP (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9×10-11 W/Hz1/2, and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.

AB - A novel top-illuminated metamorphic In0.53Ga0.47As p-i-n hotodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded InxGa1-xP (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9×10-11 W/Hz1/2, and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.

KW - GaAs

KW - Heterostructure

KW - InGaAs

KW - Metamorphic

KW - p-i-n photodiode

UR - http://www.scopus.com/inward/record.url?scp=17644388169&partnerID=8YFLogxK

U2 - 10.1117/12.577048

DO - 10.1117/12.577048

M3 - Conference article

AN - SCOPUS:17644388169

SN - 0277-786X

VL - 5624

SP - 399

EP - 406

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 78

T2 - Semiconductor and Organic Optoelectronic Materials and Devices

Y2 - 9 November 2004 through 11 November 2004

ER -

Low-leakage in0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic in xGa1-xP buffer

摘要

存取文件

其它文件與鏈接

指紋

引用此