For the first time, foundry CMOS logic based RF technology is introduced for 10Gb/s transceiver in which active and passive RF elements have been realized in a single chip. Superior RF CMOS of 115GHz fT, 80GHz fMAX and 2.2dB NFmin at 10GHz has been fabricated by aggressive device scaling and layout optimization. High Q MiM capacitor and spiral Cu inductor have been successfully implemented in the same chip by 0.13μm low-K/Cu BEOL technology. Core 1.0V MOS and/or junction varactors for VCO at 10GHz are offerings free of extra cost but realized by elaborated layout. Triple well is introduced to provide superior substrate noise isolation by >10dB suppression at 10GHz and beyond.
|頁（從 - 到）||39-40|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 10月 2003|
|事件||2003 Symposium on VLSI Technology - Kyoto, Japan|
持續時間: 10 6月 2003 → 12 6月 2003