Low-K/Cu CMOS-based SoC technology with 115-GHz fT, 100-GHz fmax, low noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor

Jyh-Chyurn Guo*

*此作品的通信作者

    研究成果: Article同行評審

    4 引文 斯高帕斯(Scopus)

    摘要

    Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz fT, 100-GHz fmax, and sub-1.0-dB NF min at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-;μm low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout.

    原文English
    文章編號1668232
    頁(從 - 到)331-338
    頁數8
    期刊IEEE Transactions on Semiconductor Manufacturing
    19
    發行號3
    DOIs
    出版狀態Published - 1 8月 2006

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