@inproceedings{e87d1d49389d416895f50552b05e53bb,
title = "Low-I RESET unipolar HfO 2 RRAM and tunable resistive-switching mode via interface engineering",
abstract = "Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation nonvolatile memory (NVM) due to its low-voltage operation, fast switching speed and high-density integration [1]. Two common resistive switching (RS) modes in RRAM are unipolar and bipolar modes [2]. A unipolar RRAM in series with a rectifying diode, so-called one diode-one resistor (1D1R) cell, is particularly attractive for high-density applications because of the minimal 4F 2 cell size [3]. However, high RESET current (I RESET) impedes the cell size scaling in 1D1R array. Recently, we have demonstrated a reliable Ni/HfO 2/Si unipolar RRAM, fully compatible with the Si technology [4, 5]. In this paper, we show that unipolar HfO 2 RRAM exhibits excellent NVM characteristics promising for low-I RESET, low-power operation in the future high-density 1D1R array. In addition, we show that the RS mode can be tailored by a bottom interfacial layer of Al 2O 3 between HfO 2 and Si. New evidence on the location of filament connections/ruptures and RS mechanism will be discussed in details.",
author = "Lin, {Kuan Liang} and Tuo-Hung Hou and Lee, {Yao Jen} and Lin, {Jun Hung} and Chang, {Jhe Wei} and Jiann Shieh and Chou, {Cheng Tung} and Chang, {Wen Hsiung} and Jang, {Wen Yueh} and Lin, {Chen Hsi}",
year = "2011",
month = dec,
day = "1",
doi = "10.1109/ISDRS.2011.6135404",
language = "English",
isbn = "9781457717550",
series = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",
booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",
note = "null ; Conference date: 07-12-2011 Through 09-12-2011",
}