Low frequency noise in nanoscale pMOSFETs with strain induced mobility enhancement and dynamic body biases

Kuo Liang Yeh*, Chih You Ku, Wei Lun Hong, Jyh-Chyurn Guo

*此作品的通信作者

    研究成果: Conference contribution同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    Local strain effect on low frequency noise (LFN) of pMOSFETs with gate length down to 60 nm was investigated in this paper. Novel and interesting results were identified from the pMOSFETs adopting embedded SiGe (e-SiGe) in source/drain for uni-axial compressive stress. This local compressive strain can realize significant mobility enhancement and desired current boost in nanoscale pMOSFETs. However, the dramatic increase of LFN emerges as a penalty traded off with mobility enhancement. The escalated LFN may become a critical killer to analog and RF circuits. Forward body biases (FBB) can improve the effective mobility (μeff) and reduce LFN attributed to reduced normal field (Eeff). However, the benefit from FBB becomes insignificant in strained pMOSFETs with sub-100 nm gate length.

    原文English
    主出版物標題IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
    頁面785-788
    頁數4
    DOIs
    出版狀態Published - 1 12月 2009
    事件2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States
    持續時間: 7 6月 200912 6月 2009

    出版系列

    名字IEEE MTT-S International Microwave Symposium Digest
    ISSN(列印)0149-645X

    Conference

    Conference2009 IEEE MTT-S International Microwave Symposium, IMS 2009
    國家/地區United States
    城市Boston, MA
    期間7/06/0912/06/09

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