Low-frequency noise analysis of Si/SiGe channel pMOSFETs

Pei-Wen Li*, W. M. Liao

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Low-frequency noise characteristics of 0.1 μm Si1-xGex channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict that Si1-xGex channel pMOSFETs could offer improved low-frequency noise performance as compared to the conventional bulk Si devices. This improvement in Si1-xGex channel pMOSFETs could be attributed to less effective oxide trap density for noise generation due to the increasing separation of quasi-Fermi level and valence band edge at Si-SiO2 interface by Ge-induced band offset.

原文English
頁(從 - 到)2281-2285
頁數5
期刊Solid-State Electronics
46
發行號12
DOIs
出版狀態Published - 12月 2002

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