Low Dit high-k/In0.53Ga0.47As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction

D. Hassan Zadeh, H. Oomine, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    指紋

    深入研究「Low D<sub>it</sub> high-k/In<sub>0.53</sub>Ga<sub>0.47</sub>As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction」主題。共同形成了獨特的指紋。

    Engineering & Materials Science

    Physics & Astronomy

    Chemical Compounds