TY - GEN
T1 - Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography
AU - Chen, H. L.
AU - Ko, Fu-Hsiang
AU - Chu, T. C.
AU - Cheng, H. C.
AU - Huang, T. Y.
N1 - Publisher Copyright:
© 2001 Japan Soc. Of Applied Physics.
PY - 2001
Y1 - 2001
N2 - Summary form only given. For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.
AB - Summary form only given. For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.
UR - http://www.scopus.com/inward/record.url?scp=84960373085&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2001.984124
DO - 10.1109/IMNC.2001.984124
M3 - Conference contribution
AN - SCOPUS:84960373085
T3 - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001
SP - 132
EP - 133
BT - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2001
Y2 - 31 October 2001 through 2 November 2001
ER -