Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

S. Z. Rahaman; S. Maikap; C. H. Lin; T. Y. Wu; Y. S. Chen; P. J. Tzeng; F. Chen; C. S. Lai; M. J. Kao; M. J. Tsai

doi:10.1109/VTSA.2009.5159279

Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure

S. Z. Rahaman
, S. Maikap^*
, C. H. Lin
, T. Y. Wu
, Y. S. Chen
, P. J. Tzeng
, F. Chen
, C. S. Lai
, M. J. Kao
, M. J. Tsai

^*此作品的通信作者

前瞻半導體研究所

研究成果: Conference contribution › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta₂O₅/W structure has been proposed. The low resistance state (R_Low) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (R_High/R_Low) of 5.3x10₇, good endurance of >10₃ cycles, and excellent retention >11 hours) with resistance ratio of > 9x10₃ can be useful in future nonvolatile memory applications.

原文	English
主出版物標題	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
頁面	33-34
頁數	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159279
出版狀態	Published - 2009
事件	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, 台灣持續時間: 27 4月 2009 → 29 4月 2009

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
國家/地區	台灣
城市	Hsinchu
期間	27/04/09 → 29/04/09

存取文件

10.1109/VTSA.2009.5159279

其它文件與鏈接

Link to publication in Scopus

引用此

Rahaman, S. Z., Maikap, S., Lin, C. H., Wu, T. Y., Chen, Y. S., Tzeng, P. J., Chen, F., Lai, C. S., Kao, M. J., & Tsai, M. J. (2009). Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure. 於 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (頁 33-34). 文章 5159279 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159279

@inproceedings{1ff2fce5edf7414aa3181bf584ca0189,

title = "Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure",

abstract = "Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3x107, good endurance of >103 cycles, and excellent retention >11 hours) with resistance ratio of > 9x103 can be useful in future nonvolatile memory applications.",

author = "Rahaman, \{S. Z.\} and S. Maikap and Lin, \{C. H.\} and Wu, \{T. Y.\} and Chen, \{Y. S.\} and Tzeng, \{P. J.\} and F. Chen and Lai, \{C. S.\} and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2009",

doi = "10.1109/VTSA.2009.5159279",

language = "English",

isbn = "9781424427857",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "33--34",

booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

note = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 ; Conference date: 27-04-2009 Through 29-04-2009",

}

Rahaman, SZ, Maikap, S, Lin, CH, Wu, TY, Chen, YS, Tzeng, PJ, Chen, F, Lai, CS, Kao, MJ & Tsai, MJ 2009, Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure. 於 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159279, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 頁 33-34, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, 台灣, 27/04/09. https://doi.org/10.1109/VTSA.2009.5159279

Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure. / Rahaman, S. Z.; Maikap, S.; Lin, C. H. 等.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 33-34 5159279 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

AU - Rahaman, S. Z.

AU - Maikap, S.

AU - Lin, C. H.

AU - Wu, T. Y.

AU - Chen, Y. S.

AU - Tzeng, P. J.

AU - Chen, F.

AU - Lai, C. S.

AU - Kao, M. J.

AU - Tsai, M. J.

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N2 - Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3x107, good endurance of >103 cycles, and excellent retention >11 hours) with resistance ratio of > 9x103 can be useful in future nonvolatile memory applications.

AB - Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3x107, good endurance of >103 cycles, and excellent retention >11 hours) with resistance ratio of > 9x103 can be useful in future nonvolatile memory applications.

UR - https://www.scopus.com/pages/publications/77950182234

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DO - 10.1109/VTSA.2009.5159279

M3 - Conference contribution

AN - SCOPUS:77950182234

SN - 9781424427857

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 33

EP - 34

BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

T2 - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

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ER -

Rahaman SZ, Maikap S, Lin CH, Wu TY, Chen YS, Tzeng PJ 等. Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure. 於 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 33-34. 5159279. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2009.5159279