Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning

Jiann Heng Chen, Tan Fu Lei, Tien-Sheng Chao, Tien Pao Su, J. Huang, A. Tuan, S. K. Chen

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A clustered tool, including in-situ HF-vapour cleaning, can be used to obtain a native-oxide-free silicon surface without exposing the surface to air after etching. This technique is attractive for the poly-plug process for dynamic random access storages (DRAMs) because the high aspect ratio contact in DRAMs can be easily cleaned using vapour phase HF cleaning. A comparison of four methods for contact hole cleaning is presented, including conventional wet HF-dipping and/or a new in-situ HF-vapour cleaning method.

原文English
頁(從 - 到)756-757
頁數2
期刊Electronics Letters
36
發行號8
DOIs
出版狀態Published - 13 4月 2000

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