Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

H. L. Chen; Y. F. Chuang; C. C. Lee; C. I. Hsieh; Fu-Hsiang Ko; L. A. Wang

doi:10.1016/S0167-9317(03)00084-4

Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

H. L. Chen^*, Y. F. Chuang, C. C. Lee, C. I. Hsieh, Fu-Hsiang Ko, L. A. Wang

^*此作品的通信作者

材料科學與工程學系

研究成果: Conference article › 同行評審

摘要

A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F₂ (157 nm) excimer laser lithography. The top TEOS oxide film is an NH₃-contaminant-free material that can be used as an NH₃ capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.

原文	English
頁（從 - 到）	312-318
頁數	7
期刊	Microelectronic Engineering
卷	67-68
DOIs	https://doi.org/10.1016/S0167-9317(03)00084-4
出版狀態	Published - 6月 2003
事件	Proceedings of the 28th International Conference on MNE - Lugano, Switzerland 持續時間: 16 9月 2002 → 19 9月 2002

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10.1016/S0167-9317(03)00084-4

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@article{a67fe8796adc43e6879bef82bd43f3ef,

title = "Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications",

abstract = "A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.",

keywords = "157 nm lithography, 193 nm lithography, Bilayer structure, Bottom antireflective coatings, Low alkaline contamination",

author = "Chen, {H. L.} and Chuang, {Y. F.} and Lee, {C. C.} and Hsieh, {C. I.} and Fu-Hsiang Ko and Wang, {L. A.}",

year = "2003",

month = jun,

doi = "10.1016/S0167-9317(03)00084-4",

language = "English",

volume = "67-68",

pages = "312--318",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

note = "Proceedings of the 28th International Conference on MNE ; Conference date: 16-09-2002 Through 19-09-2002",

}

TY - JOUR

T1 - Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

AU - Chen, H. L.

AU - Chuang, Y. F.

AU - Lee, C. C.

AU - Hsieh, C. I.

AU - Ko, Fu-Hsiang

AU - Wang, L. A.

PY - 2003/6

Y1 - 2003/6

N2 - A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.

AB - A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.

KW - 157 nm lithography

KW - 193 nm lithography

KW - Bilayer structure

KW - Bottom antireflective coatings

KW - Low alkaline contamination

UR - http://www.scopus.com/inward/record.url?scp=0038359113&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(03)00084-4

DO - 10.1016/S0167-9317(03)00084-4

M3 - Conference article

AN - SCOPUS:0038359113

SN - 0167-9317

VL - 67-68

SP - 312

EP - 318

JO - Microelectronic Engineering

JF - Microelectronic Engineering

T2 - Proceedings of the 28th International Conference on MNE

Y2 - 16 September 2002 through 19 September 2002

ER -

Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

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