Long-term photocapacitance decay behavior in undoped GaN

H. M. Chung; Y. C. Pan; W. C. Chuang; N. C. Chen; C. C. Tsai; M. C. Lee; W. H. Chen; Wei-Kuo Chen

doi:10.1143/JJAP.40.5871

Long-term photocapacitance decay behavior in undoped GaN

H. M. Chung^*, Y. C. Pan, W. C. Chuang, N. C. Chen, C. C. Tsai, M. C. Lee, W. H. Chen, Wei-Kuo Chen

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10^-27 cm² were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.

原文	English
頁（從 - 到）	5871-5874
頁數	4
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	40
發行號	10
DOIs	https://doi.org/10.1143/JJAP.40.5871
出版狀態	Published - 10月 2001

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title = "Long-term photocapacitance decay behavior in undoped GaN",

abstract = "We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified {"}waiting{"} time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10-27 cm2 were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.",

keywords = "Decay, Dislocations, GaN, Logarithmic, MOVPE, Photocapacitance",

author = "Chung, {H. M.} and Pan, {Y. C.} and Chuang, {W. C.} and Chen, {N. C.} and Tsai, {C. C.} and Lee, {M. C.} and Chen, {W. H.} and Wei-Kuo Chen",

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T1 - Long-term photocapacitance decay behavior in undoped GaN

AU - Chung, H. M.

AU - Pan, Y. C.

AU - Chuang, W. C.

AU - Chen, N. C.

AU - Tsai, C. C.

AU - Lee, M. C.

AU - Chen, W. H.

AU - Chen, Wei-Kuo

PY - 2001/10

Y1 - 2001/10

N2 - We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10-27 cm2 were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.

AB - We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10-27 cm2 were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.

KW - Decay

KW - Dislocations

KW - GaN

KW - Logarithmic

KW - MOVPE

KW - Photocapacitance

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -

Long-term photocapacitance decay behavior in undoped GaN

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