Logic performance of 40 nm InAs/InxGa1-xAs composite channel HEMTs

Faiz Aizad*, Heng-Tung Hsu, Chien I. Kuo, Li Han Hsu, Chien Ying Wu, Edward Yi Chang, Guo Wei Huang, Szu Ping Tsai

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology [2]. The outstanding low field electron transport characteristics of III-V materials make ultrahigh-speed switching at very low supply voltage possible [3]. Here, we present the latest advancement of 40 nm InAs/InxGa1-xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.

原文English
主出版物標題2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings
DOIs
出版狀態Published - 2010
事件2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Kuala Lumpur, Malaysia
持續時間: 1 12月 20103 12月 2010

出版系列

名字2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings

Conference

Conference2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010
國家/地區Malaysia
城市Kuala Lumpur
期間1/12/103/12/10

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