Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method

Bae Horng Chen*, Po Yuan Lo, Jeng Hua Wei, Ming Jinn Tsai, Chien Liang Hwang, Tien-Sheng Chao, Horng-Chih Lin, Tiao Yuan Huang

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Lateral-growth carbon nanotubes (CNTs) were fabricated in a pre-assigned area using an integrated circuit compatible method. In order to synthesize single wall carbon nanotubes (SWNT) for the fabrication of a field-effect transistor (FET), the cobalt-mixtetraethoxysilane (TEOS) (CMT) solution is proposed. The CMT solution has the unique property of dispersing the cobalt (Co) catalyst well and uniformly embedding it in a predetermined location after the CMT solution has solidified. The lateral growth of bundle-SWNT could be formed in atmospheric chemical vapor deposition (APCVD) with ethanol.

原文English
期刊Electrochemical and Solid-State Letters
8
發行號10
DOIs
出版狀態Published - 7 10月 2005

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