Localization of NBTI-induced oxide damage in direct tunneling regime gate oxide pMOSFET using a novel low gate-leakage gated-diode (L2-GD) method

Steve S. Chung*, D. K. Lo, J. J. Yang, T. C. Lin

*此作品的通信作者

    研究成果: Conference article同行評審

    25 引文 斯高帕斯(Scopus)

    摘要

    As gate oxide thickness reduces, previous reported methods can not work well for very thin gate oxide devices as a result of the measured leakage current through the gate oxide. For the first time, a novel Low gate Leakage Gate-Diode (L2-GD) method has been developed for the interface characterization of MOSFET devices with gate oxide in the direct tunneling regime. Three-peak experimental results, as seen from DCIV measurement, can be easily obtained from this L2-GD method. This method has been demonstrated successfully for the ultra-thin (12-20Å) gate oxide device. Also, by using this new technique, the localized oxide damage due to NBTI or HC (Hot Carrier) stress effect can be identified simply from the measured drain currents. Therefore, this L2-GD technique is well suited for the characterization of very thin gate oxide reliabilities, and in particular for the nano-scale CMOS devices.

    原文English
    頁(從 - 到)513-516
    頁數4
    期刊Technical Digest - International Electron Devices Meeting
    DOIs
    出版狀態Published - 2002
    事件2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
    持續時間: 8 12月 200211 12月 2002

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