Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress
- Yao Jen Lee*
- , Chia Hao Fan
- , Wen Luh Yang
- , Wen Yan Lin
- , Bohr Ran Huang
- , Tien-Sheng Chao
- , D. S. Chuu
*此作品的通信作者
研究成果: Conference contribution › 同行評審