Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

Yao Jen Lee*, Chia Hao Fan, Wen Luh Yang, Wen Yan Lin, Bohr Ran Huang, Tien-Sheng Chao, D. S. Chuu

*此作品的通信作者

研究成果: Conference contribution同行評審

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