Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

Yao Jen Lee; Chia Hao Fan; Wen Luh Yang; Wen Yan Lin; Bohr Ran Huang; Tien-Sheng Chao; D. S. Chuu

doi:10.1109/IPFA.2006.251004

Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

Yao Jen Lee^*, Chia Hao Fan, Wen Luh Yang, Wen Yan Lin, Bohr Ran Huang, Tien-Sheng Chao, D. S. Chuu

^*此作品的通信作者

電子物理學系

研究成果: Conference contribution › 同行評審

原文	English
主出版物標題	Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
頁面	88-91
頁數	4
DOIs	https://doi.org/10.1109/IPFA.2006.251004
出版狀態	Published - 1 12月 2006
事件	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, 新加坡持續時間: 3 7月 2006 → 7 7月 2006

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
國家/地區	新加坡
城市	Singapore
期間	3/07/06 → 7/07/06

存取文件

10.1109/IPFA.2006.251004

其它文件與鏈接

Link to publication in Scopus

引用此

Lee, Y. J., Fan, C. H., Yang, W. L., Lin, W. Y., Huang, B. R., Chao, T.-S., & Chuu, D. S. (2006). Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (頁 88-91). 文章 4017029 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.251004

Lee, Yao Jen ; Fan, Chia Hao ; Yang, Wen Luh 等. / Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses : Mobility enhancement, size dependence, and hot carrier stress. Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. 頁 88-91 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{cededd69fd4e4b7f9fbaa41881f6c156,

title = "Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress",

author = "Lee, {Yao Jen} and Fan, {Chia Hao} and Yang, {Wen Luh} and Lin, {Wen Yan} and Huang, {Bohr Ran} and Tien-Sheng Chao and Chuu, {D. S.}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/IPFA.2006.251004",

language = "English",

isbn = "1424402069",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "88--91",

booktitle = "Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006",

note = "13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 ; Conference date: 03-07-2006 Through 07-07-2006",

}

Lee, YJ, Fan, CH, Yang, WL, Lin, WY, Huang, BR, Chao, T-S & Chuu, DS 2006, Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006., 4017029, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 頁 88-91, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006, Singapore, 新加坡, 3/07/06. https://doi.org/10.1109/IPFA.2006.251004

Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. / Lee, Yao Jen; Fan, Chia Hao; Yang, Wen Luh 等.
Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 88-91 4017029 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses

T2 - 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

AU - Lee, Yao Jen

AU - Fan, Chia Hao

AU - Yang, Wen Luh

AU - Lin, Wen Yan

AU - Huang, Bohr Ran

AU - Chao, Tien-Sheng

AU - Chuu, D. S.

PY - 2006/12/1

Y1 - 2006/12/1

UR - http://www.scopus.com/inward/record.url?scp=34250669668&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2006.251004

DO - 10.1109/IPFA.2006.251004

M3 - Conference contribution

AN - SCOPUS:34250669668

SN - 1424402069

SN - 9781424402069

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 88

EP - 91

BT - Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

Y2 - 3 July 2006 through 7 July 2006

ER -

Lee YJ, Fan CH, Yang WL, Lin WY, Huang BR, Chao TS 等. Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 88-91. 4017029. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2006.251004