Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

V. A. Volodin; V. A. Gritsenko; Albert Chin

doi:10.1134/S1063785018050279

Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

V. A. Volodin^*, V. A. Gritsenko, Albert Chin

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si₃N₄) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si₃N₄ contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si₃N₄.

原文	English
頁（從 - 到）	424-427
頁數	4
期刊	Technical Physics Letters
卷	44
發行號	5
DOIs	https://doi.org/10.1134/S1063785018050279
出版狀態	Published - 1 5月 2018

存取文件

10.1134/S1063785018050279

其它文件與鏈接

Link to publication in Scopus

引用此

@article{f256b8af2ced4421acf89ff6e12124c4,

title = "Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride",

abstract = "Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.",

author = "Volodin, {V. A.} and Gritsenko, {V. A.} and Albert Chin",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = may,

day = "1",

doi = "10.1134/S1063785018050279",

language = "English",

volume = "44",

pages = "424--427",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "Pleiades Publishing",

number = "5",

}

TY - JOUR

T1 - Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

AU - Volodin, V. A.

AU - Gritsenko, V. A.

AU - Chin, Albert

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

AB - Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

UR - http://www.scopus.com/inward/record.url?scp=85049589857&partnerID=8YFLogxK

U2 - 10.1134/S1063785018050279

DO - 10.1134/S1063785018050279

M3 - Article

AN - SCOPUS:85049589857

SN - 1063-7850

VL - 44

SP - 424

EP - 427

JO - Technical Physics Letters

JF - Technical Physics Letters

IS - 5

ER -

Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

摘要

存取文件

其它文件與鏈接

指紋

引用此