Local Modulation of Electrical Transport in 2D Layered Materials Induced by Electron Beam Irradiation

Chih Pin Lin, Po Chun Chen, Jyun Hong Huang, Ching Ting Lin, Ding Wang, Wei Ting Lin, Chun Cheng Cheng, Chun-Jung Su, Yann Wen Lan, Tuo-Hung Hou*


研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)


Effective doping techniques that precisely and locally control the conductivity and carrier polarity, i.e., electron (n-type) or hole (p-type), play a vital role in the remarkable success of Si-based technology and thus are critical for developing useful devices based on two-dimensional layered transition-metal dichalcogenides (TMDs). In contrast to the previous approaches based on either chemical doping or phase transition that requires complex chemicals or a high thermal budget and shows limited tunability and reliability, we propose a simple yet effective electron-beam irradiation (EBI) technique as an alternative for facilitating polarity transformation and transport modulation in selected regions. The EBI process may generate a precise amount of native chalcogen defects in both MoS2 and MoTe2 by controlling the EBI dosage. First-principles simulations support that the presence of native chalcogen vacancies may substantially reduce the band gaps of TMDs. In MoTe2, the progressive evolution of p-type conduction, n-type conduction, to metallic-like conduction can be observed with increasing EBI dosage. The high conductivity of metallic-like MoTe2 induced by EBI is comparable to that in a metallic 1T′-MoTe2, demonstrating the ability to selectively form extremely conductive regions in semiconducting TMDs. The proposed EBI technique could be potentially applied to a wide range of layered TMDs and facilitate the development of high-performance TMD-based devices in the future.

頁(從 - 到)684-691
期刊ACS Applied Electronic Materials
出版狀態Published - 28 5月 2019


深入研究「Local Modulation of Electrical Transport in 2D Layered Materials Induced by Electron Beam Irradiation」主題。共同形成了獨特的指紋。