Local electric-field-induced oxidation of titanium nitride films

S. Gwo*, C. L. Yeh, P. F. Chen, Y. C. Chou, T. T. Chen, Tien-Sheng Chao, S. F. Hu, T. Y. Huang

*此作品的通信作者

研究成果: Article同行評審

61 引文 斯高帕斯(Scopus)

摘要

Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.

原文English
頁(從 - 到)1090-1092
頁數3
期刊Applied Physics Letters
74
發行號8
DOIs
出版狀態Published - 1 十二月 1999

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