Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mndoped GaN intermediate band photodetection

Feng Wen Huang, Jinn Kong Sheu, Ming Lun Lee, Shang Ju Tu, Wei Chih Lai, Wen Che Tsai, Wen-Hao Chang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vaporphase epitaxy are demonstrated. The up-converters exhibit a significant upconverted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of 450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.

原文English
頁(從 - 到)A1211-A1218
頁數8
期刊Optics Express
19
發行號106
DOIs
出版狀態Published - 7 十一月 2011

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