Light Induced RESET Phenomenon in Invisible Memristor for Photo Sensing

Dayanand Kumar, Aftab Saleem, Lai Boon Keong, Yeong Her Wang, Tseung Yuen Tseng*

*此作品的通信作者

研究成果: Article同行評審

摘要

In this letter, we present a novel invisible bilayer ZnSnOy/ZnSnOx memristor for photo sensing. The device exhibits excellent photo sensing features such as a highly stable electrical set and optical reset endurances at least 2200 cycles for blue light and 1800 cycles for green and red light without any deterioration. Moreover, the device shows excellent retention (105 s) at 90 °C without disruption and high transmittance of about 85%. These outstanding device properties would allow us to create either an optical to an electronic memory device or an always-on continuous measurement optoelectronic sensor.

原文English
頁(從 - 到)1069-1072
頁數4
期刊Ieee Electron Device Letters
43
發行號7
DOIs
出版狀態Published - 1 7月 2022

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