Light extraction enhancement of GaN-based light-emitting diodes using crown-shaped patterned sapphire substrates

Ching Hsueh Chiu*, Lung Hsing Hsu, Chia Yu Lee, Chien-Chung Lin, Bo Wen Lin, Shang Ju Tu, Yan Hao Chen, Che Yu Liu, Wen Ching Hsu, Yu-Pin Lan, Jinn Kong Sheu, Tien-Chang Lu, Gou Chung Chi, Hao-Chung Kuo, Shing Chung Wang, Chun-Yen Chang

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by conventional photolithography. The transmission electron microscopy images demonstrate that the threading dislocations were significantly suppressed by epitaxial lateral overgrowth (ELOG). The Monte Carlo ray-tracing simulation reveals that the light extraction of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.

原文English
文章編號6188511
頁(從 - 到)1212-1214
頁數3
期刊IEEE Photonics Technology Letters
24
發行號14
DOIs
出版狀態Published - 15 7月 2012

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