Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

Wei Tsung Chen; Hsiu Wen Hsueh; Hsiao-Wen Zan; Chuang Chuang Tsai

doi:10.1149/1.3584088

Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

Wei Tsung Chen^*, Hsiu Wen Hsueh, Hsiao-Wen Zan, Chuang Chuang Tsai

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

33 引文斯高帕斯（Scopus）

摘要

This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.

原文	English
頁（從 - 到）	H297-H299
期刊	Electrochemical and Solid-State Letters
卷	14
發行號	7
DOIs	https://doi.org/10.1149/1.3584088
出版狀態	Published - 2011

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10.1149/1.3584088

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abstract = "This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.",

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AU - Tsai, Chuang Chuang

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AB - This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

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