Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

Wei Tsung Chen*, Hsiu Wen Hsueh, Hsiao-Wen Zan, Chuang Chuang Tsai

*此作品的通信作者

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.

原文English
頁(從 - 到)H297-H299
期刊Electrochemical and Solid-State Letters
14
發行號7
DOIs
出版狀態Published - 2011

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