Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate

Y. L. Chueh*, L. J. Chou, S. L. Cheng, J. H. He, Wen-Wei Wu, L. J. Chen

*此作品的通信作者

研究成果: Article同行評審

摘要

Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.

原文English
期刊Electrochemical and Solid-State Letters
8
發行號6
DOIs
出版狀態Published - 4 七月 2005

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