LED materials: Epitaxy and quantum well structures

Zhen Yu Li; Hao Chung Kuo; Chen Yu Shieh; Ching Hsueh Chiu; Po Min Tu; Wu Yih Uen

doi:10.1007/978-3-319-00176-0_10

LED materials: Epitaxy and quantum well structures

Zhen Yu Li^*, Hao Chung Kuo, Chen Yu Shieh, Ching Hsueh Chiu, Po Min Tu, Wu Yih Uen

^*此作品的通信作者

光電工程學系

研究成果: Chapter › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

原文	English
主出版物標題	Handbook of Advanced Lighting Technology
發行者	Springer International Publishing
頁面	73-121
頁數	49
ISBN（電子）	9783319001760
ISBN（列印）	9783319001753
DOIs	https://doi.org/10.1007/978-3-319-00176-0_10
出版狀態	Published - 1 1月 2017

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10.1007/978-3-319-00176-0_10

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引用此

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title = "LED materials: Epitaxy and quantum well structures",

abstract = "This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.",

author = "Li, {Zhen Yu} and Kuo, {Hao Chung} and Shieh, {Chen Yu} and Chiu, {Ching Hsueh} and Tu, {Po Min} and Uen, {Wu Yih}",

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T2 - Epitaxy and quantum well structures

AU - Li, Zhen Yu

AU - Kuo, Hao Chung

AU - Shieh, Chen Yu

AU - Chiu, Ching Hsueh

AU - Tu, Po Min

AU - Uen, Wu Yih

PY - 2017/1/1

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N2 - This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

AB - This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

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BT - Handbook of Advanced Lighting Technology

PB - Springer International Publishing

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LED materials: Epitaxy and quantum well structures

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