Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Po-Tsun Liu*, T. M. Tsai, T. C. Chang

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator- semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150 °C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.

原文English
文章編號182903
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
86
發行號18
DOIs
出版狀態Published - 2 5月 2005

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