摘要
This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator- semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150 °C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.
原文 | English |
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文章編號 | 182903 |
頁(從 - 到) | 1-3 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 86 |
發行號 | 18 |
DOIs | |
出版狀態 | Published - 2 5月 2005 |