Leakage behavior of the quasi-superlattice stack for multilevel charge storage

T. C. Chang*, S. T. Yan, Po-Tsun Liu, C. W. Chen, H. H. Wu, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

摘要

The leakage mechanism of the quasi-superlattice structure was investigated by current-voltage measurements for multilevel charge storage. It was found that the resonant tunneling occurred at around 2, 2.5 and 7V under a gate voltage swept from 0 to 10 V. It was observed that the the leakage current at room temperature remained low when the 10 V gate voltage was applied. It was also found that a negative differential resistance occurred at different gate biases for the measurements of 50 K.

原文English
頁(從 - 到)3687-3689
頁數3
期刊Applied Physics Letters
84
發行號18
DOIs
出版狀態Published - 3 5月 2004

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