Layout-dependent stress effect on high-frequency characteristics and flicker noise in multifinger and donut MOSFETs

Kuo Liang Yeh*, Jyh-Chyurn Guo

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    7 引文 斯高帕斯(Scopus)

    摘要

    The impact of MOSFET layout-dependent stress on high-frequency performance and flicker noise has been investigated. The proposed donut MOSFETs demonstrate the advantages over the standard multifinger MOSFETs, such as the lower flicker noise S ID/I DS 2 in the low-frequency domain and the higher cutoff frequency f T in the very high-frequency region. The elimination of the transverse stress σ from shallow trench isolation (STI) and the suppression of interface traps along the STI edge are proposed as the primary factors responsible for the enhancement of the effective mobility μ eff, as well as f T, and the reduction of flicker noise. The significantly lower flicker noise realized by donut devices suggests the reduction of STI-generated traps and the suppression of mobility fluctuation due to eliminated transverse stress. The former is applied to n-channel MOS in which the flicker noise is determined by the number-fluctuation model. The latter is responsible for p-channel MOS whose flicker noise is dominated by the mobility-fluctuation model.

    原文English
    文章編號5944963
    頁(從 - 到)3140-3146
    頁數7
    期刊IEEE Transactions on Electron Devices
    58
    發行號9
    DOIs
    出版狀態Published - 1 9月 2011

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