Layout-dependent effects on high frequency performance and noise of sub-40nm multi-finger n-channel and p-channel MOSFETs

Kuo Liang Yeh*, Chih Shiang Chang, Jyh-Chyurn Guo

*此作品的通信作者

    研究成果: Conference contribution同行評審

    6 引文 斯高帕斯(Scopus)

    摘要

    Layout dependent effects on high frequency performance parameters like f T , f MAX , and RF noise in sub-40nm multi-finger MOSFETs is investigated in this paper. Narrow-OD MOSFET with smaller finger width and larger finger number can achieve lower R g and higher f MAX . However, these narrow-OD devices suffer f T degradation and higher noise figure, even with the advantage of lower R g . The mechanisms responsible for the trade-off between different parameters will be presented to provide an important guideline of device layout for RF circuits design using nanoscale CMOS technology.

    原文English
    主出版物標題IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
    DOIs
    出版狀態Published - 3 10月 2012
    事件2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
    持續時間: 17 6月 201222 6月 2012

    出版系列

    名字IEEE MTT-S International Microwave Symposium Digest
    ISSN(列印)0149-645X

    Conference

    Conference2012 IEEE MTT-S International Microwave Symposium, IMS 2012
    國家/地區Canada
    城市Montreal, QC
    期間17/06/1222/06/12

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