@inproceedings{c4b4e01e5d844b8ca305e7134d80a6c1,
title = "Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product",
abstract = "An EOS-like latchup failure occurred in a high-voltage IC product during latchup test and was identified within ESD diodes themselves. A parasitic npn bipolar formed by ESD protection diodes was trigger-activated and produced large current to result in EOS failure. This was verified by electrical measurement from TLP and curve-tracer as well as physical failure analysis. Corresponding layout solutions were proposed and solved this anomalous latchup failure successfully. Therefore ESD protection diode should be laid carefully for true latchup-robust design.",
author = "Lin, {I. Cheng} and Chao, {Chuan Jane} and Ming-Dou Ker and Tseng, {Jen Chou} and Hsu, {Chung Ti} and Leu, {Len Yi} and Chen, {Yu Lin} and Tsai, {Chia Ku} and Huang, {Ren Wen}",
year = "2004",
doi = "10.1109/EOSESD.2004.5272617",
language = "English",
isbn = "1585370630",
series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",
booktitle = "2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04",
note = "2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 ; Conference date: 19-09-2004 Through 23-09-2004",
}