Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product

I. Cheng Lin*, Chuan Jane Chao, Ming-Dou Ker, Jen Chou Tseng, Chung Ti Hsu, Len Yi Leu, Yu Lin Chen, Chia Ku Tsai, Ren Wen Huang

*此作品的通信作者

    研究成果: Conference contribution同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    An EOS-like latchup failure occurred in a high-voltage IC product during latchup test and was identified within ESD diodes themselves. A parasitic npn bipolar formed by ESD protection diodes was trigger-activated and produced large current to result in EOS failure. This was verified by electrical measurement from TLP and curve-tracer as well as physical failure analysis. Corresponding layout solutions were proposed and solved this anomalous latchup failure successfully. Therefore ESD protection diode should be laid carefully for true latchup-robust design.

    原文English
    主出版物標題2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
    DOIs
    出版狀態Published - 1 12月 2004
    事件2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 - Grapevine, TX, United States
    持續時間: 19 9月 200423 9月 2004

    出版系列

    名字Electrical Overstress/Electrostatic Discharge Symposium Proceedings
    ISSN(列印)0739-5159

    Conference

    Conference2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
    國家/地區United States
    城市Grapevine, TX
    期間19/09/0423/09/04

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