@inproceedings{e2d8eeeef77c4451b65a50c06a96ad83,
title = "Latchup in bulk FinFET technology",
abstract = "Latchup (LU) had been considered to be less important in advanced CMOS technologies. However, I/O interface and analog applications can still operate at high voltage (e.g., 1.8V or 3.3V) in sub-20nm bulk FinFET technologies. LU threats are never eliminated and the sensitivity towards LU is increased in bulk FinFET technology.",
keywords = "Latchup, bulk FinFET, silicon control rectifier (SCR)",
author = "Dai, {C. T.} and Chen, {S. H.} and D. Linten and M. Scholz and G. Hellings and R. Boschke and J. Karp and M. Hart and G. Groeseneken and Ming-Dou Ker and A. Mocuta and N. Horiguchi",
year = "2017",
month = may,
day = "30",
doi = "10.1109/IRPS.2017.7936368",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "EL1.1--EL1.3",
booktitle = "2017 International Reliability Physics Symposium, IRPS 2017",
address = "United States",
note = "2017 International Reliability Physics Symposium, IRPS 2017 ; Conference date: 02-04-2017 Through 06-04-2017",
}