Latch-up protection design with corresponding complementary current to suppress the effect of external current triggers

Hui Wen Tsai, Ming-Dou Ker

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The robustness against latch-up in the integrated circuits can be improved by supporting complementary current at the pad under the latch-up current test (I-test). By inserting additional junctions to form parasitic bipolar sensors, the external trigger can be monitored, and the ESD protection devices can be applied to provide such current and decrease the related perturbation to the internal circuits. The proposed design and the previous work with a single guard ring have been fabricated in the same 0.5-μm 5-V process. The experimental results confirm the enhanced latch-up tolerance of this work and the practicability in the SOC era.

原文English
文章編號2424377
頁(從 - 到)242-249
頁數8
期刊IEEE Transactions on Device and Materials Reliability
15
發行號2
DOIs
出版狀態Published - 2015

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