Latch-Up Prevention With Autodetector Circuit to Stop Latch-Up Occurrence in CMOS-Integrated Circuits

Zi Hong Jiang, Ming Dou Ker

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Due to the parasitic silicon-controlled-rectifier structure, latch-up issues have been an inherent problem with bulk CMOS ICs. In this work, a novel design of an autodetector circuit to stop latch-up occurrence for latch-up prevention was proposed and successfully verified in a 0.18-<italic>&#x03BC;</italic>m 1.8&#x002F;3.3-V CMOS technology. By adding a hole&#x002F;electron detector between the input/output (I&#x002F;O) pads and internal circuitry, it is used to detect the latch-up trigger current injected toward internal circuits. When an abnormal current is injected from the I&#x002F;O pads to the internal circuits, this event can be detected by the proposed autodetector circuit.

原文English
頁(從 - 到)1-8
頁數8
期刊IEEE Transactions on Electromagnetic Compatibility
DOIs
出版狀態Accepted/In press - 2022

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