摘要
Due to the parasitic silicon-controlled-rectifier structure, latch-up issues have been an inherent problem with bulk CMOS ICs. In this work, a novel design of an autodetector circuit to stop latch-up occurrence for latch-up prevention was proposed and successfully verified in a 0.18-<italic>μ</italic>m 1.8/3.3-V CMOS technology. By adding a hole/electron detector between the input/output (I/O) pads and internal circuitry, it is used to detect the latch-up trigger current injected toward internal circuits. When an abnormal current is injected from the I/O pads to the internal circuits, this event can be detected by the proposed autodetector circuit.
原文 | English |
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頁(從 - 到) | 1-8 |
頁數 | 8 |
期刊 | IEEE Transactions on Electromagnetic Compatibility |
DOIs | |
出版狀態 | Accepted/In press - 2022 |