Due to the parasitic silicon-controlled-rectifier structure, latch-up issues have been an inherent problem with bulk CMOS ICs. In this work, a novel design of an autodetector circuit to stop latch-up occurrence for latch-up prevention was proposed and successfully verified in a 0.18-<italic>μ</italic>m 1.8/3.3-V CMOS technology. By adding a hole/electron detector between the input/output (I/O) pads and internal circuitry, it is used to detect the latch-up trigger current injected toward internal circuits. When an abnormal current is injected from the I/O pads to the internal circuits, this event can be detected by the proposed autodetector circuit.
|頁（從 - 到）||1-8|
|期刊||IEEE Transactions on Electromagnetic Compatibility|
|出版狀態||Accepted/In press - 2022|