La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristics

C. H. Huang*, S. B. Chen, Albert Chin

*此作品的通信作者

    研究成果: Letter同行評審

    14 引文 斯高帕斯(Scopus)

    摘要

    We have studied the high-k La2O3 p-MOSFETs on Si0.3Ge0.7 substrate. Nearly identical gate oxide current, capacitance density, and time-dependent dielectric breakdown (TDDB) are obtained for La2O3/Si and La2O3/Si0.3Ge0.7 devices that indicate the excellent Si0.3Ge0.7 quality without any side effect. The measured hole mobility in nitrided La2O3/Si p-MOSFETs is 31 cm2/V-s and comparable with published data in nitrided HfO2/Si p-MOSFETs. In sharp contrast, a higher mobility of 55 cm2/V-s is measured in La2O3/Si0.3Ge0.7 p-MOSFET, which is improved by 1.8 times as compared with La2O3/Si control devices. The high mobility in Si0.3Ge0.7 p-MOSFET gives another step for integrating high-k gate dielectrics into VLSI process.

    原文English
    頁(從 - 到)710-712
    頁數3
    期刊IEEE Electron Device Letters
    23
    發行號12
    DOIs
    出版狀態Published - 1 十二月 2002

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