Lasing at approximately 1 μm from In0.2Ga0.8As/GaAs quantum well surface-emitting resonators with GaAs/AlAs mirrors

K. Tai*, Kai-Feng Huang, J. L. Jewell, R. J. Fischer, S. L. McCall, A. Y. Cho

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The authors demonstrate ultra-low-threshold, optically pumped, surface-emitting lasing from MBE-grown resonators containing In0.2Ga0.8As/GaAs strained quantum well active layers and GaAs/AlAs mirrors. The emission wavelength ranged from approximately 0.98 to 1.0 μm in the two samples grown, and it varied with position on the samples. The lasing threshold was 50 pJ on an estimated area of 30 μm2. The single-mode emission linewidth just above threshold was 1 nm. At high pump energies the observed spectrum (time-integrated) was broadened toward short wavelengths mainly due to dynamic tuning of the cavity. The threshold carrier density was estimated to be 5 × 1012 cm-2/well using a 30-μm2 spot area and 25-pJ absorbed energy. The threshold current density for these structures is 20 μA/μm2 if they are pumped electrically. Nonlinear optical switching at 1.06 μm with a 5:1 contrast was achieved with a 20-pJ, 0.9-μm pump.

原文English
主出版物標題CONFERENCE ON LASERS AND ELECTRO-0PTICS
編輯 Anon
發行者Publ by IEEE
頁面382-384
頁數3
ISBN(列印)1557520860
出版狀態Published - 1 12月 1989
事件Summaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD, USA
持續時間: 24 4月 198928 4月 1989

出版系列

名字CONFERENCE ON LASERS AND ELECTRO-0PTICS

Conference

ConferenceSummaries of Papers Presented at the Conference on Lasers and Electro-Optics
城市Baltimore, MD, USA
期間24/04/8928/04/89

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