@inproceedings{a177d8c55c57419397ed1a6af74474f4,
title = "Lasing Action in GaN-Based VCSELs with top High-Contrast Grating Reflectors",
abstract = "We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.99 MW/cm2 and a lasing wavelength at 369.8 nm. The demonstration of HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.",
keywords = "GaN, high contrast grating (HCG), TiO, vertical cavity surface emitting laser (VCSEL)",
author = "Chang, {Tsu Chi} and Kuo, {Shuo Yi} and Ehsan Hashemi and {\AA}sa Haglund and Tien-chang Lu",
year = "2018",
month = oct,
day = "30",
doi = "10.1109/ISLC.2018.8516231",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "191--192",
booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",
address = "United States",
note = "null ; Conference date: 16-09-2018 Through 19-09-2018",
}