Lasing Action in GaN-Based VCSELs with top High-Contrast Grating Reflectors

Tsu Chi Chang, Shuo Yi Kuo, Ehsan Hashemi, Åsa Haglund, Tien-chang Lu

研究成果: Conference contribution同行評審

摘要

We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.99 MW/cm2 and a lasing wavelength at 369.8 nm. The demonstration of HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.

原文English
主出版物標題26th International Semiconductor Laser Conference, ISLC 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面191-192
頁數2
ISBN(電子)9781538664865
DOIs
出版狀態Published - 30 十月 2018
事件26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
持續時間: 16 九月 201819 九月 2018

出版系列

名字Conference Digest - IEEE International Semiconductor Laser Conference
2018-September
ISSN(列印)0899-9406

Conference

Conference26th International Semiconductor Laser Conference, ISLC 2018
國家/地區United States
城市Santa Fe
期間16/09/1819/09/18

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