Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate

Tai Min Chang; Hsin Kai Fang; Cheng Liao; Wen Yang Hsu; Yew-Chuhg Wu

doi:10.1149/2.0101502jss

Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate

Tai Min Chang, Hsin Kai Fang, Cheng Liao, Wen Yang Hsu, Yew-Chuhg Wu

材料科學與工程學系

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.

原文	English
頁（從 - 到）	R20-R22
期刊	ECS Journal of Solid State Science and Technology
卷	4
發行號	2
DOIs	https://doi.org/10.1149/2.0101502jss
出版狀態	Published - 1 1月 2015

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abstract = "Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.",

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AU - Fang, Hsin Kai

AU - Liao, Cheng

AU - Hsu, Wen Yang

AU - Wu, Yew-Chuhg

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AB - Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.

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Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate

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