Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.
|頁（從 - 到）||R20-R22|
|期刊||ECS Journal of Solid State Science and Technology|
|出版狀態||Published - 1 1月 2015|