Large-scale atomistic approach to random-dopant-induced characteristic variability in nanoscale CMOS digital and high-frequency integrated circuits

Keyphrases

• Atomistic Approach 100%
• Characteristic Fluctuation 100%
• Circuit Topology 33%
• CMOS Integrated Circuits 33%
• Common-source Amplifier 33%
• Compact Model 33%
• Coupled Simulation 33%
• Device Variability 33%
• Digital Circuits 66%
• Discrete Dopants 100%
• Dopant 33%
• Gate Capacitance 33%
• High-frequency Applications 33%
• High-frequency Characteristics 66%
• Integrated Circuits 100%
• Inverter Gate 33%
• NAND Gate 33%
• Nanoscale CMOS 100%
• NOR Gate 33%
• Physical Model 33%
• Random Dopants 100%
• Simulation Approach 33%
• Simulation Techniques 33%
• Transistor 33%
• Transition Time 33%

Engineering

• Amplifier 14%
• Atomistic Approach 100%
• CMOS Integrated Circuits 14%
• Coupled Circuits 14%
• Digital Circuits 14%
• Digital Electronics 14%
• Digital Frequency 100%
• Dopants 100%
• Electric Network Topology 14%
• Frequency Characteristic 28%
• Gate Capacitance 14%
• Integrated Circuit 100%
• Inverter 14%
• Nanoscale 100%
• Physical Model 14%
• Random Nature 14%
• Simulation Technique 14%