@article{6abad16a3d68426b92267f803662f6d4,
title = "Large array device characteristics improvements",
abstract = "Large array devices are often used for big current driving capabilities in power electronic integrated circuit (IC) applications. Since these structures have big sizes, typical electrostatic discharge protection methodologies cannot be applied in such kind of IC. Otherwise, IC will become too huge to marketing. In this paper, a novel signal control switching architecture for adding large array devices' ESD performances is proposed. Only a little layout area is increased, but a huge electrostatic discharge robustness improvement can be obtained. Moreover, electrical safe operation area characteristics of large array devices are also improved very much with this new scheme. This study is processed in 0.15 μm Bipolar CMOS DMOS (BCD) with silicide technologies.",
keywords = "Electrical safe operation area (eSOA), Electrostatic discharge (ESD), Human body mode (HBM), Large array device (LAD), Machine mode (MM), N-type metal oxide semiconductor transistor (NMOST), Resistor to protect gate oxide (RPO), Signal control switching (SCS), Thermal or 2nd breakdown voltage/current (Vt2/It2), Transmission line pulse generator (TLPG)",
author = "Huang, {Shao Chang} and Li, {Ching Ho} and Liao, {Chih Cherng} and Chen, {Li Fan} and Chen, {Chun Chih} and Hsu, {Kai Chieh} and Lin, {Gong Kai} and Lin, {Chih Hsuan} and Lee, {Jian Hsing} and Kao, {Yu Yung} and Chen, {Ke Horng}",
note = "Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd",
year = "2021",
month = oct,
doi = "10.1016/j.microrel.2021.114353",
language = "English",
volume = "125",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Ltd",
}