@inproceedings{4e0a425e50454c099ac28fd25bf47352,
title = "Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode",
abstract = " Epitaxial growth of aligned MoS 2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS 2 /p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy. ",
author = "Kyooho Jung and Liu, {Che Yu} and Kim, {J. D.} and Wonsik Choi and Weidong Zhou and Hao-Chung Kuo and Xiuling Li",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE Photonics Conference, IPC 2016 ; Conference date: 02-10-2016 Through 06-10-2016",
year = "2016",
month = oct,
doi = "10.1109/IPCon.2016.7831271",
language = "English",
series = "2016 IEEE Photonics Conference, IPC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "657--658",
booktitle = "2016 IEEE Photonics Conference, IPC 2016",
address = "美國",
}