Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Sun Jung Kim, Byung Jin Cho*, Ming Fu Li, Chunxiang Zhu, Albert Chin, Dim Lee Kwong

*此作品的通信作者

    研究成果: Letter同行評審

    21 引文 斯高帕斯(Scopus)

    摘要

    A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/μm2 with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.

    原文English
    頁(從 - 到)442-444
    頁數3
    期刊IEEE Electron Device Letters
    24
    發行號7
    DOIs
    出版狀態Published - 1 七月 2003

    指紋

    深入研究「Lanthanide (Tb)-doped HfO<sub>2</sub> for high-density MIM capacitors」主題。共同形成了獨特的指紋。

    引用此