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Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
A. Zakharova
,
Shun-Tung Yen
, K. A. Chao
研究成果
:
Article
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同行評審
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引文 斯高帕斯（Scopus）
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深入研究「Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells」主題。共同形成了獨特的指紋。
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Keyphrases
Quantum Well
100%
GaSb
100%
Semiconductor-metal Transition
100%
Landau Levels
100%
Level Structure
100%
Anticrossing
50%
G-factor
50%
Magnetic Field
33%
Heavy Hole
33%
Large Values
16%
Applied Voltage
16%
Phase Transition
16%
Lattice Mismatch
16%
Barrier Layer
16%
Electric
16%
Electron Holes
16%
High Magnetic Field
16%
Zero Magnetic Field
16%
Positive-sequence Voltage
16%
Quantum Well Structure
16%
Function Theory
16%
Envelope Function
16%
Scattering Matrix Method
16%
AlSb
16%
Zero Bias
16%
Critical Magnetic Field
16%
Low Magnetic Field
16%
Wide Gap
16%
All-electron
16%
Quantizing Magnetic Field
16%
Engineering
Quantum Well
100%
Magnetic Field
100%
Electron Level
50%
Scattering Matrix
16%
Applied Voltage
16%
Positive Voltage
16%
Envelope Function
16%
Applied Magnetic Field
16%
Barrier Layer
16%
Matrix Method
16%
Physics
Quantum Wells
100%
Magnetic Field
100%
Metalloid
100%
Holes (Electron Deficiencies)
14%
Surface Properties
14%
Earth and Planetary Sciences
Metalloid
100%
Magnetism
100%
Barrier Layer
14%
S Matrix Theory
14%
Holes (Electron Deficiencies)
14%
Matrix Method
14%
Material Science
Quantum Well
100%
Semimetals
100%