Key issues in fabricating microstructures with high aspect ratios by using deep X-ray lithography

Chao Min Cheng; Ren-Haw Chen

doi:10.1016/j.mee.2004.02.004

Key issues in fabricating microstructures with high aspect ratios by using deep X-ray lithography

Chao Min Cheng^*, Ren-Haw Chen

^*此作品的通信作者

機械工程學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

High aspect ratio microstructures are frequently made with the Lithographie, Galvanoformung, Abformung (LIGA) process. The success of this process depends critically on "deep" X-ray lithography (DXRL). This paper presents a variety of experimentally and analytically determined techniques for optimizing DXRL. These include methods for designing and fabricating high-quality X-ray masks. Methods for optimizing the exposure dosage and developing cycle are described. New methods for promoting resist adhesion and for avoiding resist film cracking are discussed. The influence of developer surface tension on the resist solvation process is quantified and new methods for controlling this surface tension are described.

原文	English
頁（從 - 到）	335-342
頁數	8
期刊	Microelectronic Engineering
卷	71
發行號	3-4
DOIs	https://doi.org/10.1016/j.mee.2004.02.004
出版狀態	Published - 1 5月 2004

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10.1016/j.mee.2004.02.004

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abstract = "High aspect ratio microstructures are frequently made with the Lithographie, Galvanoformung, Abformung (LIGA) process. The success of this process depends critically on {"}deep{"} X-ray lithography (DXRL). This paper presents a variety of experimentally and analytically determined techniques for optimizing DXRL. These include methods for designing and fabricating high-quality X-ray masks. Methods for optimizing the exposure dosage and developing cycle are described. New methods for promoting resist adhesion and for avoiding resist film cracking are discussed. The influence of developer surface tension on the resist solvation process is quantified and new methods for controlling this surface tension are described.",

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AU - Cheng, Chao Min

AU - Chen, Ren-Haw

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N2 - High aspect ratio microstructures are frequently made with the Lithographie, Galvanoformung, Abformung (LIGA) process. The success of this process depends critically on "deep" X-ray lithography (DXRL). This paper presents a variety of experimentally and analytically determined techniques for optimizing DXRL. These include methods for designing and fabricating high-quality X-ray masks. Methods for optimizing the exposure dosage and developing cycle are described. New methods for promoting resist adhesion and for avoiding resist film cracking are discussed. The influence of developer surface tension on the resist solvation process is quantified and new methods for controlling this surface tension are described.

AB - High aspect ratio microstructures are frequently made with the Lithographie, Galvanoformung, Abformung (LIGA) process. The success of this process depends critically on "deep" X-ray lithography (DXRL). This paper presents a variety of experimentally and analytically determined techniques for optimizing DXRL. These include methods for designing and fabricating high-quality X-ray masks. Methods for optimizing the exposure dosage and developing cycle are described. New methods for promoting resist adhesion and for avoiding resist film cracking are discussed. The influence of developer surface tension on the resist solvation process is quantified and new methods for controlling this surface tension are described.

KW - DXRL

KW - Exposure and development

KW - High aspect ratio

KW - LIGA

KW - Microstructure

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DO - 10.1016/j.mee.2004.02.004

M3 - Article

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SN - 0167-9317

VL - 71

SP - 335

EP - 342

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 3-4

ER -

Key issues in fabricating microstructures with high aspect ratios by using deep X-ray lithography

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