Junctionless FETs with a Fin Body for Multi-V TH and Dynamic Threshold Operation

Malkundi Puttaveerappa Vijay Kumar, Jer Yi Lin, Kuo Hsing Kao, Tien-Sheng Chao*

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this paper, a n-type junctionless FET (JLFET) with a p-type fin body (FB) is investigated using a 3-D numerical simulator. We show that the proposed device (FB-JLFET) with a p + FB can control the electrostatic potential of the channel more efficiently for multi- V TH (threshold voltage) and dynamic threshold (DT) operation. Moreover, body bias application is implemented in FB-JLFET and a large body factor (gamma) is predicted for wide range V TH modulation. Thanks to the stronger potential coupling between the channel and FB, the proposed device exhibits gamma improvement compared to the conventional JL bulk FinFETs under the same electrostatic control. In addition, DT operation is studied in the form of a JLFET for the first time and it exhibits 37% improvement of the on-state drive current and better subthreshold swing (S.S.) compared to FB-JLFET without DT. This paper provides the feasibility of multi- V TH operation with body bias mode for high performance or low-power applications and DT operation for high-speed circuits with low power consumption.

原文English
文章編號8399532
頁(從 - 到)3535-3542
頁數8
期刊IEEE Transactions on Electron Devices
65
發行號8
DOIs
出版狀態Published - 1 8月 2018

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