IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz

W. J. Ho, N. L. Wang, Mau-Chung Chang, A. Sailer, J. A. Higgins

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)
原文English
頁數1
期刊IEEE Transactions on Electron Devices
39
發行號11
DOIs
出版狀態Published - 1 一月 1992

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