摘要
Laser-ablated Ge reacts with N2 to form a new species that absorbs near 887.9 cm-1. Based on observed and calculated vibrational wave numbers and Ge- and N-isotopic shifts, the carrier of observed feature to be linear GeNNGe. Experimental observations that the N-N bond remains intact and that the concentration of linear GeNNGe became enhanced at an increased temperature of deposition and after annealing are consistent with this mechanism.
原文 | English |
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頁(從 - 到) | 9710-9718 |
頁數 | 9 |
期刊 | Journal of Chemical Physics |
卷 | 118 |
發行號 | 21 |
DOIs | |
出版狀態 | Published - 1 6月 2003 |