Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

C. K. Shu*, J. Ou, H. C. Lin, Wei-Kuo Chen, M. C. Lee

*此作品的通信作者

研究成果: Article同行評審

84 引文 斯高帕斯(Scopus)

摘要

The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property.

原文English
頁(從 - 到)641-643
頁數3
期刊Applied Physics Letters
73
發行號5
DOIs
出版狀態Published - 1998

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